Published 1990
| Version v1
Book
HEREM of defects in GaAs/Ga1-XInxAs strained layer superlattices
Creators
- 1. Center for Materials Science, Mechanical and Electronic Engineering Div., Los Alamos National Lab., Los Alamos, NM (USA)
Description
This paper reports on GaAs/Ga1-xInxAs strained layer superlattices with well-widths of 7nm, barrier widths of 14nm and periods of 10 to 30 examined by HREM both in plan view and cross section. Strain release occurs mostly by dislocation generation but twins are also observed, especially at the substrate interface. High resolution images of dislocations, twins and interfaces are analyzed to elucidate mechanisms of strain release
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 1-55899-072-0
- Imprint Title
- High resolution electron microscopy of defects in materials
- Imprint Pagination
- 391 p.
- Journal Page Range
- p. 193-198.
Conference
- Title
- Spring meeting of the Materials Research Society (MRS).
- Dates
- 16-21 Apr 1990.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22083744
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEFECTS; DISLOCATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; MECHANICAL PROPERTIES; STRAINS; SUBSTRATES; SUPERLATTICES; TWINNING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LINE DEFECTS; PNICTIDES
Optional Information
- Secondary number(s)
- CONF-900466--.