Crystal growth of CdTe for γ-ray detectors

The paper aims at assessing the various crystal growth methods against the detector requirements and present information on the progress which has been made with these methods in the last few years. Its main conclusions are, that progress has been mainly achieved in growing larger crystal volumes and improving crystal purity and perfection, whereas little has been done to definitely establish the connection between the various crystal growth parameters and such fundamental properties as the μtau products which are influenced by the compensation methods used. Equally the question as to how the crystal growth or the compensation technique influences the polarization effect has not yet been resolved. Hence large volumes of sufficiently high μtau material to prepare spectrometers can still not be reliably achieved, although there are applications where the present material is quite useful. (Auth.)