Published May 1, 2009
| Version v1
Journal article
Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes
- 1. Solar Cell Group, Green Technology Research Center, Chang Gung University, Taoyuan, Taiwan (China)
- 2. Department of Chemical and Materials Engineering, Chang Gung University, No. 259 Wen-Hwa 1st Rd., Kwei-Shan, Taoyuan 333, Taiwan (China)
- 3. Department of Environmental Engineering, Kun Shan University , Tainan, Taiwan (China)
- 4. Energy and Environmental Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan (China)
- 5. Department of Chemical Engineering, National Taipei University of Technology, Taipei, Taiwan (China)
- 6. Department of Chemical Engineering, National Chung Cheng University, Chiayi, Taiwan (China)
Description
Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57x1014-8.82x1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2008.12.011Additional details
Identifiers
- DOI
- 10.1016/j.physb.2008.12.011;
- PII
- S0921-4526(08)00751-5;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 8-11
- Journal Page Range
- p. 1264-1270
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41085381
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY ADDITIONS; CARRIER DENSITY; CONVERSION; DENSITY; DEPOSITION; DOPED MATERIALS; FILMS; GLASS; ILLUMINANCE; INDIUM COMPOUNDS; MATHEMATICAL SOLUTIONS; P-TYPE CONDUCTORS; SILVER COMPOUNDS; SUBSTRATES; SULFUR COMPOUNDS; THICKNESS; TIN OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; ANTIMONY ALLOYS; CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR MATERIALS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.