Published September 3, 2012 | Version v1
Journal article

Electronic structure of graphene oxide and reduced graphene oxide monolayers

  • 1. Central Surface Analytical Facility, Indian Institute of Technology Bombay, Mumbai 400076 (India)
  • 2. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)

Description

Graphene oxide (GO) monolayers obtained by Langmuir Blodgett route and suitably treated to obtain reduced graphene oxide (RGO) monolayers were studied by photoelectron spectroscopy. Upon reduction of GO to form RGO C1s x-ray photoelectron spectra showed increase in graphitic carbon content, while ultraviolet photoelectron spectra showed increase in intensity corresponding to C2p-π electrons (∼3.5 eV). X-ray excited Auger transitions C(KVV) and plasmon energy loss of C1s photoelectrons have been analyzed to elucidate the valence band structure. The effective number of (π+σ) electrons as obtained from energy loss spectra was found to increase by ∼28% on reduction of GO.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
101
Journal Issue
10
Journal Page Range
p. 103103-103103.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics