Published November 1977 | Version v1
Journal article Metadata-only

On radiative defect-formation in gadolinium-containing silicon

Creators

  • 1. AN SSSR, Novosibirsk. Inst. Fiziki Poluprovodnikov

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
О радиационном дефектообразовании в кремнии, содержащем гадолиний

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
11
Journal Issue
11
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
2243-2245

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
9405609
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
BORON ADDITIONS; CARRIER LIFETIME; DOPED MATERIALS; ELECTRONS; FAST NEUTRONS; GADOLINIUM ADDITIONS; HALL EFFECT; MEV RANGE 01-10; OXYGEN; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; VACANCIES
Descriptors DEC
BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; LEPTONS; LIFETIME; MEV RANGE; NEUTRONS; NONMETALS; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS; RARE EARTH ADDITIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.