Bandgap alignment of α-CsPbI3 perovskites with synergistically enhanced stability and optical performance via B-site minor doping
Creators
- 1. Institute of Materials, Ningbo University of Technology, Ningbo City, 315016 (China)
- 2. CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083 (China)
- 3. Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing, 100083 (China)
Description
Highlights: • We reported, for the first time, B-site minor doping engineering of CsPbI3 perovskites. • The perovskite bandgaps have been finely aligned by B-site minor doping of Sn2+, Ge2+ and Si2+. • Minor doping of 2.8 at.% Sn2+ could enhance the stability and optical performance synergistically. • The deeply physics of B-site minor doping engineering of perovskites has been proposed. -- Abstract: A relatively wide bandgap and intrinsically phase instability of α-CsPbI3 perovskites (PVSKs) greatly hinder their potential applications in solar cells. One of the popular solutions is based on high-concentration doping, which however encounters big difficulty in the balance between phase stability and optical performance. Here, we report the advance on bandgap alignment of CsPbI3 through B-site (Pb2+ cation) minor doping engineering employing density functional theory (DFT). It is discovered that the bandgaps could be finely aligned by minor doping of Si2+, Sn2+ and Ge2+, which is caused by the downshift of conduction band minimum contributed by B-p orbital level within CsPb1-xBxI3 PVSKs, and thus offer shrunken gaps and enlarged imaginary part of dielectric function for enhanced photo absorption. Furthermore, the minor doping of Sn2+ could not only bring a suitable tolerance factor for CsPbI3 with a slighter lattice distortion, but also increase the charge density of Pb2+ to enhance the interaction between Pb2+ and I−, which consequently improve their structure stability.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nanoen.2019.04.084Additional details
Identifiers
- DOI
- 10.1016/j.nanoen.2019.04.084;
- PII
- S2211285519303854;
Publishing Information
- Journal Title
- Nano Energy (Print)
- Journal Volume
- 61
- Journal Page Range
- p. 389-396
- ISSN
- 2211-2855
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54122814
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; CATIONS; CHARGE DENSITY; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; GERMANIUM IONS; IODINE IONS; LEAD IONS; PEROVSKITE; PHASE STABILITY; SILICON IONS; SOLAR CELLS; TIN IONS; TOLERANCE
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; DIRECT ENERGY CONVERTERS; EQUIPMENT; IONS; MATERIALS; MINERALS; OXIDE MINERALS; PEROVSKITES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT; SORPTION; STABILITY; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier Ltd. All rights reserved.