Energy distribution measurements of 300 keV transmitted protons at the axial-to-planar channeling transition in silicon

The energy distribution of protons with initial energy of 300 keV which passed through a 0.76 μm thick Si monocrystal film was measured under the conditions of transition from the axial <110> to planar (110) channeling. The experimental angular dependences of the transparency coefficient and of the first three moments of the energy distributions (energy loss, straggling, and skewness) for 300 keV protons are shown. The shape of curves are discussed explaining the resonance dechanneling effect and the non-monotonic behaviour of transparency in the case of the axial-to-planar channeling transition