Published December 2006
| Version v1
Journal article
Effect of nano-SiC dispersion on thermoelectric properties of Bi2Te3 polycrystals
Creators
- 1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
Description
Nano-SiC dispersed Bi2Te3 was synthesized by mechanical alloying (MA) followed by spark plasma sintering (SPS). The effects of SiC dispersion on the thermoelectric properties of the SPS-sintered Bi2Te3 alloys were investigated. The results revealed that SiC dispersion in the Bi2Te3 matrix increased the absolute value of Seebeck coefficient. Although the electrical resistance was increased somewhat, Bi2Te3 with 0.1 wt% SiC showed a higher power factor than Bi2Te3 without SiC. Because the dispersion of SiC nano-particles reduced the thermal conductivity at the same time, 0.1 wt% (∝0.24 vol% SiC) addition of SiC nano-particles increased the figure of merit of Bi2Te3 by 18%. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.200622011Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applied Research
- Journal Volume
- 203
- Journal Issue
- 15
- Journal Page Range
- p. 3768-3773
- ISSN
- 0031-8965
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 38006040
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; DISPERSIONS; ELECTRIC CONDUCTIVITY; NANOSTRUCTURES; PARTICLES; POLYCRYSTALS; SCANNING ELECTRON MICROSCOPY; SEEBECK EFFECT; SILICON CARBIDES; SINTERED MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION
- Descriptors DEC
- BISMUTH COMPOUNDS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- With 9 figs., 14 refs.. SICI: 0031-8965(200612)203:15<3768::AID-PSSA200622011>3.0.TX;2-G