Published July 1980 | Version v1
Journal article Metadata-only

Characteristics of the interaction of low-energy ions with the surface of a semiconductor

Creators

Description

The spectra of 2p x-ray photoelectrons were determined for the (111) surface of Si before and after bombardment with 100 eV Ar+ ions. The results indicated that such ion bombardment increased the surface density of the target atoms

Additional details

Publishing Information

Journal Title
Sov. Phys. - Semicond. (Engl. Transl.)
Journal Volume
14
Journal Issue
7
Series
Sov. Phys. - Semicond. (Engl. Transl.).
Journal Page Range
841-842

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13668317
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ARGON IONS; EV RANGE 100-1000; PHOTOELECTRON SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; SILICON; SURFACE PROPERTIES
Descriptors DEC
CHARGED PARTICLES; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; EV RANGE; IONS; RADIATION EFFECTS; SEMIMETALS; SPECTROSCOPY