Published March 2007 | Version v1
Journal article

Dilute magnetic semiconductor (In,Mn)Sb: Transport and magnetic properties

  • 1. N. S. Kurnakov Institute of General and Inorganic Chemistry of the Russian Academy of Sciences, 31 Leninsky prosp., 119991 Moscow (Russian Federation)
  • 2. Department of Physics, Moscow State University, Leninskie Gory, 119992 Moscow (Russian Federation)
  • 3. Institute for Physical Chemistry of Ceramics of the Russian Academy of Sciences, 48 Ozernaya St., 119361 Moscow (Russian Federation)

Description

The magnetotransport and magnetostatic properties of synthesized dilute magnetic semiconductors (DMS) In x Mn1-x Sb were studied. The samples with x=0.75-1.33 at% Mn manifested the hysteresis at room temperature with the coercive force below 50 Oe and the saturation field about 5 kOe. Both the magnetoresistance and Hall effect were positive. With the Mn concentration decrease the magnetoresistance significantly increased. The co-doping of these DMS with Zn enhances the ferromagnetic properties according to the kinematic exchange theory

Additional details

Identifiers

DOI
10.1016/j.jmmm.2006.10.936;
PII
S0304-8853(06)02027-0;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
310
Journal Issue
2
Journal Page Range
p. 2132-2134
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
17. International Conference on Magnetism
Dates
20-25 Aug 2006
Place
Kyoto (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39024868
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COERCIVE FORCE; HALL EFFECT; HYSTERESIS; INDIUM ANTIMONIDES; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.