Published April 14, 2008 | Version v1
Journal article

Tin laser-produced plasma source modeling at 13.5 nm for extreme ultraviolet lithography

  • 1. School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland)
  • 2. EPPRA SAS, Villebon sur Yvette 91140 (France)
  • 3. Keldysh Institute of Applied Mathematics RAS, Moscow 125047 (Russian Federation)
  • 4. Institute of Laser Engineering, Osaka University, 2-6 Yamada-Oka, Suita, Osaka 565-0871 (Japan)

Description

Extreme ultraviolet lithography semiconductor manufacturing requires a 13.5 nm light source. Laser-produced plasma emission from Sn V-Sn XIV ions is one proposed industry solution. The effect of laser pulse width and spatial profile on conversion efficiency is analyzed over a range of power densities using a two-dimensional radiative magnetohydrodynamic code and compared to experiment using a 1.064 μm, neodymium:yttrium aluminium garnet laser on a planar tin target. The calculated and experimental conversion efficiencies and the effects of self-absorption in the plasma edge are compared. Best agreement between theory and experiment is found for an 8.0 ns Gaussian pulse

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
15
Journal Page Range
p. 151501-151501.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2008 American Institute of Physics