Published June 1, 2005 | Version v1
Journal article

Epitaxial growth and magnetic properties of Cr-doped AlN thin films

  • 1. Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, NE 68588 (United States)

Description

Cr-doped AlN thin films were epitaxially grown on Al2O3(001) substrates at low temperature by reactive magnetron sputtering, and their magnetic properties were investigated. Extensive x-ray diffraction studies indicated that the films have a wurtzite-type hexagonal structure and are (001) oriented, with an epitaxial relationship of the [100] direction of the films along the [110] direction of Al2O3. The c axis lattice parameter of the films showed a linear dependence on the Cr concentration for Cr concentrations below 0.15. Room temperature ferromagnetism was observed, and the magnetic properties showed strong dependence on the Cr concentration over a wide range

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/17/3137/cm5_21_009.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
17
Journal Issue
21
Journal Page Range
p. 3137-3142
ISSN
0953-8984
CODEN
JCOMEL