Published June 1, 2005
| Version v1
Journal article
Epitaxial growth and magnetic properties of Cr-doped AlN thin films
Creators
- 1. Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, NE 68588 (United States)
Description
Cr-doped AlN thin films were epitaxially grown on Al2O3(001) substrates at low temperature by reactive magnetron sputtering, and their magnetic properties were investigated. Extensive x-ray diffraction studies indicated that the films have a wurtzite-type hexagonal structure and are (001) oriented, with an epitaxial relationship of the [100] direction of the films along the [110] direction of Al2O3. The c axis lattice parameter of the films showed a linear dependence on the Cr concentration for Cr concentrations below 0.15. Room temperature ferromagnetism was observed, and the magnetic properties showed strong dependence on the Cr concentration over a wide range
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/17/3137/cm5_21_009.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/17/3137/cm5_21_009.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/17/21/009;
- PII
- S0953-8984(05)94657-2;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 17
- Journal Issue
- 21
- Journal Page Range
- p. 3137-3142
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36104291
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; ALUMINIUM OXIDES; DOPED MATERIALS; EPITAXY; FERROMAGNETISM; LATTICE PARAMETERS; MAGNETIC PROPERTIES; MAGNETRONS; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MAGNETISM; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; TEMPERATURE RANGE