Published February 26, 2021 | Version v1
Journal article

Carbon nanotube/polydimethylsiloxane composite micropillar arrays using non-lithographic silicon nanowires as a template for performance enhancement of triboelectric nanogenerators

  • 1. College of Nanotechnology, King Mongkut's Institute of Technology Ladkrabang, Ladkrabang, Bangkok 10520 (Thailand)
  • 2. National Nanotechnology Center (NANOTEC), National Science and Technology Development Agency (NSTDA), Khlong Luang, Pathum Thani 12120 (Thailand)
  • 3. Faculty of Industrial Science and Technology, Tokyo University of Science, Katsushika, Tokyo 125-8585 (Japan)

Description

Carbon nanotube/polydimethylsiloxane composite micropillar (CNT/PDMS MP) arrays were successfully fabricated using non-lithographic silicon nanowire (SiNW) arrays as a template for performance enhancement of triboelectric nanogenerators (TENG). The CNT/PDMS MP arrays were obtained by pouring CNT/PDMS composites on the SiNW arrays and peeled off. Surface topology of CNT/PDMS composites directly depends on morphology of SiNW arrays, which can be varied by the etching time of the typical metal-assisted chemical etching process. The micropatterned CNT/PDMS composites was mostly depicted to the SiNW array template pattern when the morphologies of the SiNW were optimized with a length of approximately 10 mm. Next, the CNT/PDMS MP arrays were utilized as a triboelectric layer of TENGs, generating the maximum output voltage of 22.84 ± 0.85 V, enabling an approximately 18-fold improvement in an electrical output compared to the flat PDMS-based TENG. The performance enhancement of TENGs based on CNT/PDMS MP arrays are attributed to synergic effects of (1) an enhancement of electrostatic induction by CNT composites, increasing dielectric constant, and (2) an enhancement of electrification by surface texturing using non-lithographic pattern and CNT composites. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/abcb7c

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
32
Journal Issue
9
Journal Page Range
[10 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53071645
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CARBON NANOTUBES; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; LAYERS; NANOWIRES; PERFORMANCE; SILICON; SURFACES; TEXTURE
Descriptors DEC
CARBON; ELEMENTS; EVALUATION; MATERIALS; NANOSTRUCTURES; NANOTUBES; NONMETALS; SEMIMETALS