Published June 25, 2009 | Version v1
Journal article Metadata-only

Annealing effects of Ga2O3-ZnO core-shell heteronanowires

Creators

  • 1. Division of Materials Science and Engineering, Inha University, 253 Yong Hyun Dong, Nam Gu, Incheon 402-751 (Korea, Republic of)

Description

We prepared ZnO-coated Ga2O3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800 deg. C, defect-associated PL peaks (2.2 and 2.6 eV) have been intensified with respect to the UV peak, and a new 2.8 eV-peak has been generated. Possible emission mechanisms are also discussed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2009.04.018

Additional details

Identifiers

DOI
10.1016/j.mseb.2009.04.018;
PII
S0921-5107(09)00187-1;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
163
Journal Issue
1
Journal Page Range
p. 44-47
ISSN
0921-5107
CODEN
MSBTEK

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41031291
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; DEFECTS; EV RANGE 01-10; FIBERS; GALLIUM OXIDES; MORPHOLOGY; PEAKS; PHOTOLUMINESCENCE; QUANTUM WIRES; SHELLS; THERMODYNAMIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; SCATTERING; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.