Published 1995
| Version v1
Miscellaneous
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Ion-surface interactions as a tool for exploration of very low temperature (<370 deg C) silicon epitaxy
Creators
- 1. California Institute of Technology, Pasadena, (United States)
Description
Short communication
Files
28080411.pdf
Files
(22.8 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 5002.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ARGON IONS; COMPUTERIZED SIMULATION; ENERGY DEPENDENCE; IRRADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS METHOD; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; SILICON; SPUTTERING
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; IONS; PHASE TRANSFORMATIONS; RADIATION EFFECTS; SEMIMETALS; SIMULATION