Quantitatively identical orientation-dependent ionization energy and electron affinity of diindenoperylene
Creators
- 1. Graduate School of Advanced Integration Science, Chiba University 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan)
- 2. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
Description
Molecular orientation dependences of the ionization energy (IE) and the electron affinity (EA) of diindenoperylene (DIP) films were studied by using ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. The molecular orientation was controlled by preparing the DIP films on graphite and SiO2 substrates. The threshold IE and EA of DIP thin films were determined to be 5.81 and 3.53 eV for the film of flat-lying DIP orientation, respectively, and 5.38 and 3.13 eV for the film of standing DIP orientation, respectively. The result indicates that the IE and EA for the flat-lying film are larger by 0.4 eV and the frontier orbital states shift away from the vacuum level compared to the standing film. This rigid energy shift is ascribed to a surface-electrostatic potential produced by the intramolecular polar bond (>C−-H+) for standing orientation and π-electron tailing to vacuum for flat-lying orientation
Additional details
Identifiers
- DOI
- 10.1063/1.4850531;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 103
- Journal Issue
- 25
- Journal Page Range
- p. 253301-253301.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45038733
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- AFFINITY; EV RANGE 01-10; GRAPHITE; HYDROGEN IONS 1 PLUS; IONIZATION; ORGANIC COMPOUNDS; ORIENTATION; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; POTENTIALS; SILICA; SILICON OXIDES; SUBSTRATES; SURFACES; TAILINGS; THIN FILMS; ULTRAVIOLET RADIATION
- Descriptors DEC
- CARBON; CATIONS; CHALCOGENIDES; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; ENERGY RANGE; EV RANGE; FILMS; HYDROGEN IONS; IONS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SECONDARY EMISSION; SILICON COMPOUNDS; SOLID WASTES; SPECTROSCOPY; WASTES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC