Solution processed SiNxCyOz thin films thermally transformed from silicon oxide/melamine hybrid system
Creators
- 1. Department of Polymer Science and Engineering, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
- 2. KANEKA Corporation, 5-1-1 Torikai-Nishi, Settsu, Osaka 566-007 (Japan)
- 3. School of Advanced Materials Science and Engineering, Sungkyunkwan University 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
- 4. Department of Chemical Engineering, Sungkyunkwan University, 300 Chunchun-dong, Jangan Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
- 5. Department of Chemical Engineering, Kyonggi University, 94-6 yiui-dong Yeongton-gu, Suwon, Gyeonggi-do 443-760 (Korea, Republic of)
- 6. Department of Mechanical Engineering, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, NV 89154 (United States)
- 7. Department of Energy Science, Sungkyunkwan University, 300, Chunchun-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)
Description
In this study, a solution-processable precursor of melamine and silicon oxide, was prepared and thermally converted into inorganic thin films of SiNxCyOz. Using tetra-ethoxysilane and hydroxyl-methyl-melamine, a transparent coating with a high loading content of silica of up to 50% was achieved through the hydrolysis/condensation reactions, which provided a transmittance of 85.1% (thickness of 1.5 ± 0.2 μm) and hard coating grade of 4H pencil test. When the silica/melamine coating was further heat-treated up to 900 °C in an inert environment, the organic melamine was converted into an inorganic compound composed of Si, N, C, and O atoms in the form of SiNxCyOz. The relative compositions of films varied with the heat-treatment temperature, e.g., providing SiN0.03C0.59O1.87 for the thin film heat-treated at 700 °C. The resulting inorganic thin films were mechanically strong and optically shiny with a low root mean square of roughness (< 1.0 nm) giving dielectric constants varying from 2.75 to 1.82 with heat treatment temperature that could be used as low-k materials in commercialized optoelectronic devices. - Highlights: • A solution-processable dielectric layer was fabricated through sol–gel process. • A fabricated hybrid film has an excellent optical transmittance and hardness. • The hybrid film was converted into an inorganic compound in the form of SiNxCyOz. • The dielectric constant of heat-treated specimen was measured lower than 2.0
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.05.079Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.05.079;
- PII
- S0040-6090(13)00894-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 539
- Journal Page Range
- p. 294-302
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46090124
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- HARDNESS; HEAT TREATMENTS; HYBRID SYSTEMS; HYBRIDIZATION; HYDROLYSIS; HYDROXIDES; INORGANIC COMPOUNDS; MELAMINE; PERMITTIVITY; SILICA; SILICON; SILICON OXIDES; SOLUTIONS; THIN FILMS
- Descriptors DEC
- AMINES; AZINES; CHALCOGENIDES; CHEMICAL REACTIONS; DECOMPOSITION; DIELECTRIC PROPERTIES; DISPERSIONS; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; HETEROCYCLIC COMPOUNDS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; LYSIS; MECHANICAL PROPERTIES; MINERALS; MIXTURES; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; SOLVOLYSIS; TRIAZINES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.