Published March 24, 2014 | Version v1
Journal article

Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

  • 1. Department of Photonics Engineering, Technical University of Denmark, 4000 Roskilde (Denmark)
  • 2. Danish Technological Institute, Kongsvang Alle 29, 8000 Aarhus (Denmark)
  • 3. Paul Scherrer Institute, 5232 Villigen (Switzerland)
  • 4. ISA, Department of Physics and Astronomy, Aarhus University, 8000 Aarhus (Denmark)
  • 5. Department of Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby (Denmark)

Description

The band structure of pure and Ti-alloyed anodic aluminum oxide has been examined as a function of Ti concentration varying from 2 to 20 at. %. The band gap energy of Ti-alloyed anodic Al oxide decreases with increasing Ti concentration. X-ray absorption spectroscopy reveals that Ti atoms are not located in a TiO2 unit in the oxide layer, but rather in a mixed Ti-Al oxide layer. The optical band gap energy of the anodic oxide layers was determined by vacuum ultraviolet spectroscopy in the energy range from 4.1 to 9.2 eV (300–135 nm). The results indicate that amorphous anodic Al2O3 has a direct band gap of 7.3 eV, which is about ∼1.4 eV lower than its crystalline counterpart (single-crystal Al2O3). Upon Ti-alloying, extra bands appear within the band gap of amorphous Al2O3, mainly caused by Ti 3d orbitals localized at the Ti site

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
12
Journal Page Range
p. 121910-121910.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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