Hybrid discriminator for microstrip silicon detectors

The paper describes an efficient fast-response pulse hybrid discriminators developed for microstrip silicon detectors and presents the results of an investigation into basic characteristics of the discriminator. Actuation threshhold dependences on shift voltage, power supply voltage and forming capacity value are given. Actuation time dependences on input signal amplitude are presented. Intrinsic input resistance of the discriminator is 1.2 kOhm, output characteristic transconductance - 0.72 V/mV, output signal front for 0.1-0.9 levels is 2.5 ns. The discriminators's power consumption 6 V x 4 mA. 8 refs., 8 figs