Published October 1980 | Version v1
Journal article Metadata-only

The model of growth of zinc telluride films on silicon

Creators

  • 1. Leningradskij Tekhnologicheskij Inst. (USSR)

Description

The chemical composition and structure of intergrowth boundary of film-substrate in ZnTe-Si heterostructure are stated experimentally. A model of epitaxial growth of zinc telluride films on silicon in vacuum is suggested

Additional details

Additional titles

Original title (Russian)
Модел' роста пленок теллурида цинка на кремнии

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
16
Journal Issue
10
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
1740-1745
ISSN
0002-337X

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
12595069
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL GROWTH; CRYSTAL LATTICES; FILMS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SEMICONDUCTOR JUNCTIONS; SILICON; SUBSTRATES; VAPOR DEPOSITED COATINGS; VERY HIGH TEMPERATURE; ZINC TELLURIDES
Descriptors DEC
CHALCOGENIDES; COATINGS; CRYSTAL STRUCTURE; ELEMENTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).