Low voltage, high speed and small area in-plane MEMS switch
Creators
- 1. The Department of Precision Instrument of Tsinghua University, Beijing (China)
Description
Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely applied for their low power consumption and simple process. However, compared to the out-of-plane designs, in-plane designs usually suffer from high pull-in voltage, since the feature size of the bulk-silicon process limits the gap between the driving electrodes. Area cost and speed usually have to be sacrificed to enhance the driving force and decrease the pull-in voltage.
Balancing the pull-in voltage, speed and area cost is difficult for MEMS relays/switches but is essential in many practical applications. Comb structure is promising to relieve this contradiction. In this paper, we integrated the comb structure with the cantilever structure. As a result, the pull-in voltage decreased with the decreasing of the mass and area cost. A novel electrostatic lateral MEMS switch was introduced. The experiments have shown that 12 V pull-in voltage, 120 s switching time with a 28 V driving voltage at atmospheric pressure, and small area were fabricated using a conventional bulk-silicon process. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6439/ab1635Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Micromechanics and Microengineering (Print)
- Journal Volume
- 29
- Journal Issue
- 6
- Journal Page Range
- [8 p.]
- ISSN
- 0960-1317
- CODEN
- JMMIEZ
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51065562
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- ATMOSPHERIC PRESSURE; DESIGN; ELECTRIC POTENTIAL; ELECTRODES; ELECTROSTATICS; MEMS; RELAYS; SILICON; SWITCHES; VELOCITY
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; SEMIMETALS