Published June 1, 2019 | Version v1
Journal article

Low voltage, high speed and small area in-plane MEMS switch

  • 1. The Department of Precision Instrument of Tsinghua University, Beijing (China)

Description

Electrostatic in-plane microelectromechanical systems (MEMS) relays/switches are widely applied for their low power consumption and simple process. However, compared to the out-of-plane designs, in-plane designs usually suffer from high pull-in voltage, since the feature size of the bulk-silicon process limits the gap between the driving electrodes. Area cost and speed usually have to be sacrificed to enhance the driving force and decrease the pull-in voltage.

Balancing the pull-in voltage, speed and area cost is difficult for MEMS relays/switches but is essential in many practical applications. Comb structure is promising to relieve this contradiction. In this paper, we integrated the comb structure with the cantilever structure. As a result, the pull-in voltage decreased with the decreasing of the mass and area cost. A novel electrostatic lateral MEMS switch was introduced. The experiments have shown that 12 V pull-in voltage, 120 s switching time with a 28 V driving voltage at atmospheric pressure, and small area were fabricated using a conventional bulk-silicon process. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6439/ab1635

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering (Print)
Journal Volume
29
Journal Issue
6
Journal Page Range
[8 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51065562
Subject category
S42: ENGINEERING;
Descriptors DEI
ATMOSPHERIC PRESSURE; DESIGN; ELECTRIC POTENTIAL; ELECTRODES; ELECTROSTATICS; MEMS; RELAYS; SILICON; SWITCHES; VELOCITY
Descriptors DEC
ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; SEMIMETALS