Liquid injection MOCVD of zirconium dioxide using a novel mixed ligand zirconium precursor

Zirconia films are important for sensors, as microelectronic dielectrics, and as protective coatings. There are a number of problems with traditional CVD precursors, with carbon or fluorine contamination, or with high temperatures being required for deposition. A novel mixed ligand precursor containing no fluorine is described here. High ZrO2 growth rates can be achieved at considerably lower temperatures than with conventional precursors. Auger analysis shows carbon levels as low as 2-11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase. (orig.)