Published 2013
| Version v1
Journal article
Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
Creators
- 1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
- 2. Graduate University of Chinese Academy of Sciences, Beijing 100049 (China)
- 3. Energy Materials Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
Description
The nano scale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film. The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film. The initial nucleation and growth process of the film was described. The continuous film had been already formed when the film thickness was 10 nm. The growth of the deposited Si film accorded with the Volmer-Weber growth mode
Additional details
Publishing Information
- Journal Title
- Journal of Nanomaterials (Online)
- Journal Volume
- 2013
- Journal Issue
- 2013
- Journal Page Range
- 7 p.
- ISSN
- 1687-4129
INIS
- Country of Publication
- Egypt
- Country of Input or Organization
- Egypt
- INIS RN
- 47066944
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; GLASS; NUCLEATION; PLASMA; SILICON; TOPOGRAPHY
- Descriptors DEC
- ELEMENTS; MICROSCOPY; SEMIMETALS