Published January 1994
| Version v1
Journal article
W/CaAs and Mo/GaAs contacts thermal stability
Description
Interphase interactions, mechanical and electrophysical properties of W/GaAs and Mo/GaAs contact interfaces prepared by electron-beam evaporation in 10-4 Pa vacuum were studied before and after vacuum thermal treatment at 300 deg C during 8 h. The metallic layers was shown to be an effective barrier preventing Ga and As out-diffusion both in initial and annealed samples
Additional details
Additional titles
- Original title (Russian)
- Термостабильность контактов W/GaAs, Мо/GaAs
Publishing Information
- Journal Title
- Fizika i Khimiya Obrabotki Materialov
- Journal Issue
- no.1
- Journal Page Range
- p. 104-107.
- ISSN
- 0015-3214
- CODEN
- FKOMAT
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26009815
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFUSION; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HEAT TREATMENTS; INTERFACES; MOLYBDENUM; PRESSURE DEPENDENCE; SCHOTTKY BARRIER DIODES; TEMPERATURE RANGE 0400-1000 K; TUNGSTEN
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; METALS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE; TRANSITION ELEMENTS