Published July 1991 | Version v1
Journal article Metadata-only

Synchrotron x-ray standing-wave study of Sb on GaAs(110) and InP(110)

Creators

  • 1. Stanford Electronics Laboratories, Stanford, CA (USA)
  • 2. National Institute of Standards and Technology, Gaithersburg, MD (USA)
  • 3. National Synchrotron Radiation Light Source, Brookhaven National Laboratory, Upton, NY (USA)

Description

The soft x-ray standing-wave technique has been used to study ordered monolayers of Sb on GaAs(110) and InP(110). Using the back-reflection diffraction geometry from (220) planes, we determine the perpendicular distances of Sb atoms to the substrate and compare these with theoretical calculations and elastic low-energy electron diffraction determinations. The various models of Sb chemisorption are evaluated on the basis of our data

Additional details

Publishing Information

Journal Title
Journal of Vacuum Science and Technology, B
Journal Volume
9
Journal Issue
4
Series
J. Vac. Sci. Technol., B.
Journal Page Range
2290-2293
ISSN
0734-211X
CODEN
JVTBD

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22088822
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ADSORPTION; ANTIMONY; CHEMISORPTION; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MATHEMATICAL MODELS; MICROSTRUCTURE; SOFT X RADIATION; STANDING WAVES; ULTRAHIGH VACUUM; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONIZING RADIATIONS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SCATTERING; SEPARATION PROCESSES; X RADIATION