Published October 2011 | Version v1
Journal article

First-principles calculation of the physical properties of GaAs1-xBix alloys

  • 1. Laboratoire de physique des matériaux et nanomatériaux appliquée à l'environnement Faculté des Sciences de Gabès, Université de Gabès, 6072 Gabès (Tunisia)
  • 2. Unité de Recherche sur les Hétéro-Epitaxies et Applications Faculté des Sciences de Monastir, Université de Monastir, 5019 Monastir (Tunisia)

Description

The structural, electronic and optical properties of GaAs1-xBix alloy are investigated using the density functional theory based on the full potential linearized augmented plane wave method as implemented in the Wien2k package. The exchange correlation potential is treated by generalized gradient approximation. We have studied the effect of Bi composition on equilibrium volume, energy band gap, electron and hole effective masses and dielectric function. For the electron and hole effective masses and the dielectric function variations versus bismuth composition, our results represent an attempt to investigate their qualitative trends

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/26/10/105020

Additional details

Identifiers

DOI
10.1088/0268-1242/26/10/105020;
PII
S0268-1242(11)97525-7;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
26
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45014326
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALLOYS; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; OPTICAL PROPERTIES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; GALLIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; VARIATIONAL METHODS