Published October 2011
| Version v1
Journal article
First-principles calculation of the physical properties of GaAs1-xBix alloys
Creators
- 1. Laboratoire de physique des matériaux et nanomatériaux appliquée à l'environnement Faculté des Sciences de Gabès, Université de Gabès, 6072 Gabès (Tunisia)
- 2. Unité de Recherche sur les Hétéro-Epitaxies et Applications Faculté des Sciences de Monastir, Université de Monastir, 5019 Monastir (Tunisia)
Description
The structural, electronic and optical properties of GaAs1-xBix alloy are investigated using the density functional theory based on the full potential linearized augmented plane wave method as implemented in the Wien2k package. The exchange correlation potential is treated by generalized gradient approximation. We have studied the effect of Bi composition on equilibrium volume, energy band gap, electron and hole effective masses and dielectric function. For the electron and hole effective masses and the dielectric function variations versus bismuth composition, our results represent an attempt to investigate their qualitative trends
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/26/10/105020Additional details
Identifiers
- DOI
- 10.1088/0268-1242/26/10/105020;
- PII
- S0268-1242(11)97525-7;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 26
- Journal Issue
- 10
- Journal Page Range
- [5 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45014326
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; GALLIUM ARSENIDES; OPTICAL PROPERTIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; GALLIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; PNICTIDES; VARIATIONAL METHODS