A new type of electron-beam doping

Outline of the techniques for impurity doping with high energy electron beam is described together with the experimental results and future prospect. This technique which has been invented by the author himself is based on the utilization of irradiation damage. It is simply to place an impurity sheet on the base of Si or Ge, and irradiate with electron beam with the energy from 2 to 9 MeV. As the impurity sheets, Al, In, Sb, Ge, GaP and GaSb with the thickness from 0.1 to 1.5 mm are used. The experimental conditions and the experimental results are shown in detail. The results were analysed, and the mechanism of doping was examined in respect to anomalous sputtering and anomalous diffusion, i.e. the irradiation defects, the recoil of impurity atoms, the high density production of electron-hole pairs and the energy transfer to impurity atoms due to recombination. The analysis was also made in respect to the double stream process for diffusion and the dependence of doping on the thickness of impurity sheets. (Asami, T.)