Increased chemical reactivity of single-walled carbon nano-tubes on oxide substrates: In situ imaging and effect of electron and laser irradiations
Creators
- 1. Laboratoire Charles Coulomb - L2C, UMR 5221 CNRS-Universite de Montpellier, 34095 Montpellier, (France)
- 2. Institut de Chimie Separative de Marcoule, UMR 5257 CEA-CNRS-UM2-ENSCM Site de Marcoule, Bat 426, BP 17171, 30207 Bagnols sur Ceze cedex, (France)
Description
We studied the oxygen etching of individual single-walled carbon nano-tubes on silicon oxide substrates using atomic force microscopy and high-temperature environmental scanning electron microscopy. Our in situ observations show that carbon nano-tubes are not progressively etched from their ends, as frequently assumed, but disappear segment by segment. Atomic force microscopy, before and after oxidation, reveals that the oxidation of carbon nano-tubes on substrates proceeds through a local cutting that is followed by a rapid etching of the disconnected nano-tube segment. Unexpectedly, semiconducting nano-tubes appear more reactive under these conditions than metallic ones. We also show that exposure to electron and laser beams locally increases the chemical reactivity of carbon nano-tubes on such substrates. These results are rationalized by considering the effect of substrate-trapped charges on the nano-tube density of states close to the Fermi level, which is impacted by the substrate type and the exposure to electron and laser beams. (authors)
Availability note (English)
Available from doi: http://dx.doi.org/10.1007/s12274-015-0933-5Additional details
Identifiers
Publishing Information
- Journal Title
- Nano Research (Print)
- Journal Volume
- 9
- Journal Issue
- no.2
- Journal Page Range
- p. 517-529
- ISSN
- 1998-0124
INIS
- Country of Publication
- China
- Country of Input or Organization
- France
- INIS RN
- 50033328
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; ETCHING; FERMI LEVEL; IRRADIATION; OXIDATION; OXYGEN; PHYSICAL RADIATION EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES
- Descriptors DEC
- CARBON; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRON MICROSCOPY; ELEMENTS; ENERGY LEVELS; MICROSCOPY; NANOSTRUCTURES; NANOTUBES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SILICON COMPOUNDS; SURFACE FINISHING
Optional Information
- Notes
- 58 refs.