Published December 1995 | Version v1
Journal article

Single event upsets in gallium arsenide pseudo-complementary MESFET logic

  • 1. Naval Postgraduate School, Monterey, CA (United States). Dept. of Electrical and Computer Engineering
  • 2. SFA Inc., Landover, MD (United States)
  • 3. Naval Research Lab., Washington, DC (United States)

Description

An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
42
Journal Issue
6Pt1
Journal Page Range
p. 1829-1836.
ISSN
0018-9499
CODEN
IETNAE

Conference

Title
32. annual IEEE international nuclear and space radiation effects conference.
Dates
17-21 Jul 1995.
Place
Madison, WI (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27045574
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
DATA ANALYSIS; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; PHYSICAL RADIATION EFFECTS; SPACE FLIGHT
Descriptors DEC
DATA; ELECTRONIC CIRCUITS; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-950716--.