Published December 1995
| Version v1
Journal article
Single event upsets in gallium arsenide pseudo-complementary MESFET logic
Creators
- 1. Naval Postgraduate School, Monterey, CA (United States). Dept. of Electrical and Computer Engineering
- 2. SFA Inc., Landover, MD (United States)
- 3. Naval Research Lab., Washington, DC (United States)
Description
An introduction to gallium arsenide (GaAs) Pseudo-Complementary MESFET Logic (PCML) circuits is presented. PCML was developed to reduce the sensitivity of high-speed GaAs logic to radiation-induced single event upsets (SEUs). Experiments for testing the single-event upset (SEU) sensitivity of GaAs PCML integrated circuits (ICs) are described. The results of the experiments are analyzed. This new type of high-speed, low-power, GaAs logic provides decreased sensitivity to SEUs compared to more traditional circuit designs such as Directly-Coupled FET Logic (DCFL). PCML is fully compatible with existing GaAs E/D MESFET fabrication processes, such as those commonly used to make DCFL
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 42
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 1829-1836.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- 32. annual IEEE international nuclear and space radiation effects conference.
- Dates
- 17-21 Jul 1995.
- Place
- Madison, WI (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27045574
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- DATA ANALYSIS; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; PHYSICAL RADIATION EFFECTS; SPACE FLIGHT
- Descriptors DEC
- DATA; ELECTRONIC CIRCUITS; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-950716--.