Published October 2018 | Version v1
Journal article

Control of spin transport in antiferromagnetic insulators

  • 1. Tohoku Univ., Advanced Inst. for Materials Research, Sendai, Miyagi (Japan)
  • 2. School of Materials Science and Engineering, Dalian Univ. of Technology, Dalian (China)

Description

Effective spin current switching is a key process for spin transistor. Unfortunately, it has proven to be challenging in metallic or semiconducting materials, in which the propagation of a spin current relies on electron diffusion. Recently, spin currents are found to be carried by magnons in antiferromagnetic insulators, promising alternative methods for manipulating spin. Here, the recent progress on efficient manipulating spin currents in antiferromagnetic insulators will be reviewed. The switching of the spin current becomes possible by controlling the structural phase and magnetism of the material. The underlying physics will be discussed with the introduction of the concept of spin colossal magnetoresistance. These findings pave the road towards antiferromagnetic-insulator-based spin transistors and memories. (author)

Additional details

Publishing Information

Journal Title
Magune
Journal Volume
13
Journal Issue
5
Series
雑誌名:まぐね
Journal Page Range
p. 242-248
ISSN
1880-7208

Optional Information

Notes
29 refs., 4 figs.