Published August 16, 2010
| Version v1
Journal article
Evolution of pyramid morphology during InAs(001) homoepitaxy
Creators
- 1. Research Centre for Integrated Quantum Electronics, Hokkaido University, Sapporo 0608628 (Japan)
Description
Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 μm2. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.
Additional details
Identifiers
- DOI
- 10.1063/1.3481077;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 7
- Journal Page Range
- p. 072102-072102.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060563
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DESORPTION; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; PNICTIDES; SORPTION
Optional Information
- Notes
- (c) 2010 American Institute of Physics