Published August 16, 2010 | Version v1
Journal article

Evolution of pyramid morphology during InAs(001) homoepitaxy

  • 1. Research Centre for Integrated Quantum Electronics, Hokkaido University, Sapporo 0608628 (Japan)

Description

Growth of InAs(001) homoepitaxial layer has been carried out especially at the bistable region, where the coexistence of both In-stabilized (4x2) and As-stabilized (2x4) surface reconstruction are found to be predominant. The observation of pyramid morphology in this bistable region is reported here. Atomic force microscopy studies have been performed on such pyramids. The heights of the observed pyramids vary from 12 to 26 nm with their bases from 3.6x1.2 to 18x6.3 μm2. Formation of such pyramids in the bistable region is attributed to the unique anomalous As-desorption observed during the surface reconstruction.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
97
Journal Issue
7
Journal Page Range
p. 072102-072102.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2010 American Institute of Physics