Published September 22, 2005 | Version v1
Journal article

Two dimensional photonic band gap pattering in thin chalcogenide glassy films

  • 1. Electro-Optics Division, Soreq NRC, Yavne 81800 (Israel)
  • 2. Physics Department, Ben-Gurion University, Beer-Sheva 84105 (Israel)

Description

Photonic band gap (PBG) based elements can significantly contribute to future integrated optical circuits. However, at the wavelength of 1500 nm, they require about 100 nm feature size lithographic processes, which, until now, have been typically accomplished with the help of e-beam lithography. Taking into account that all non-periodic features, e.g. waveguides and cavities, require only ∼300 nm resolution, the process can be separated in two stages. First, interference lithography is used for creation of periodic patterns with minute feature sizes. Second, the non-periodic lower resolution features are added by standard ultraviolet lithography. Using this method 1.3 μm thickness waveguides in 100 nm feature size hexagonal PBG environment were fabricated from high refractive index (n 2.2-2.5) chalcogenide photoresists

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.04.082;
PII
S0040-6090(05)00441-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
488
Journal Issue
1-2
Journal Page Range
p. 185-188
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37019777
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CHALCOGENIDES; ELECTRON BEAMS; GLASS; INTERFERENCE; LASERS; REFRACTIVE INDEX; THIN FILMS; ULTRAVIOLET RADIATION
Descriptors DEC
BEAMS; ELECTROMAGNETIC RADIATION; FILMS; LEPTON BEAMS; OPTICAL PROPERTIES; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATIONS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.