Published June 1981 | Version v1
Journal article

Study of the semiconductor properties by irradiation, (4)

  • 1. Miyazaki Univ. (Japan). Faculty of Engineering

Description

In order to know the effect of γ-Ray irradiation on ZnS Electroluminescente Phosphors (ZnS E.L.P.), we made γ-Ray irradiation on ZnS E.L.P. at 770K. And then we observed the decay of the photoluminescence of ZnS E.L.P. under room temperature. In addition, we proposed models based on Schoen-Klasens model about ZnS E.L.P. The predictions of these models concerning the emission wavelength of the photoluminescence of ZnS E.L.P. have nearly verified by experiments on ZnS E.L.P. (author)

Additional details

Additional titles

Subtitle (English)
The decay of the photoluminescence of ZnS electroluminescente phosphors by #gamma#-ray irradiation

Publishing Information

Journal Title
Miyazaki Daigaku Kogakubu Kenkyu Hokoku
Journal Issue
no.27
Series
Miyazaki Daigaku Kogakubu Kenkyu Hokoku.
ISSN
0540-4932