Published January 7, 2021 | Version v1
Journal article

Strong temperature-dependent thermoelectric power of IrMn3 thin films of different thicknesses

  • 1. Fert Beijing Institute, School of Microelectronics, Beijing Advanced Innovation Center for Big Data and Brain Computing, Beihang University, Beijing 100191 (China)
  • 2. Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)
  • 3. Hefei Innovation Research Institute, Beihang University, Hefei 230013 (China)

Description

IrMn3 thin films were experimentally characterized by thermoelectric power and resistivity as a function of temperature and sample thickness. The Seebeck coefficient shows strong temperature dependence and the value increases with temperature up to 350 K. An empirical Boltzmann sigmoid function can fit our data remarkably well. The temperature-dependent resistivity shows a similar behavior as the thermoelectric power, i.e. both these two properties exhibit a transitional behavior at some critical temperature range, which is further confirmed by the magnetic susceptibility measurements. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6463/abbbb8

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
54
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
0022-3727
CODEN
JPAPBE