1.5-1.6 μm photoluminescence of silicon layers with a high density of lattice defects

This study is concerned with photoluminescence of nanostructured silicon layers that emit radiation in the wavelength range 1.5-1.6 μm due to optical transitions to deep levels of recombination centers produced by crystal lattice defects. It is shown that the dependence of the photoluminescence intensity on the excitation power density is adequately described by the model of deep levels of one type. A shift of the photoluminescence peak to shorter wavelengths with increasing excitation power density is observed. The shift is indicative of changes in the occupancy of deep levels in the conditions of transfer of charge carriers between recombination centers.