Resistive switching kinetics of parylene-based memristive devices with Cu active electrodes

The temporal characteristics of the resistive switching process in parylene-based memristive devices with Cu electrodes are studied. It was found that the switching time of the structures is hundreds of nanoseconds at switching voltages less than 2 V. The median value of the estimated energy consumption does not exceed 3 nJ. Thus, it was shown that parylene-based memristors are effective in neuromorphic computing systems, including those trained by bio-inspired rules such as memristive STDP. The possibility of further reduction of the switching energies down to picojoules when the size of the memristors is reduced to 50x50 µm² (in crossbar architecture) is noted. Biocompatibility and scalability of the devices is also promising in the creation of energy-efficient wearable systems. The obtained results can be useful for further study of parylene-based memristors, in particular, for developing models of their performance. (paper)