CdTe low level gamma detectors based on a new crystal growth method

A new method of crystal growth, employing a high pressure, vertical Bridgman approach, was successfully applied to the growth of CdTe gamma-ray detector crystals for application to background-level, low bias dosimeters. Detectors of 1.8-mm thickness were uniformly able to detect background radiation at bias levels below 10 volts and exhibited other desirable features. The new growth method makes it possible to produce high quality uniform, crystals of large volume, and has the potential for increasing the availability and lowering the costs of CdTe detectors