Published December 26, 2011 | Version v1
Journal article Metadata-only

Spin polarization of a Ferromagnetic Narrow Gap p-(In,Mn)As Obtained from Andreev Reflection Spectroscopy

Creators

  • 1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198 (Japan)
  • 2. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 425-R2-57 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
  • 3. Dept. Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8550 (Japan)
  • 4. Dept. Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603 (Japan)
  • 5. International Center for Materials Nanoarchitectronics, NIMS (Japan)
  • 6. Research Institute for Science and Technology, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo, 162-8601 (Japan)

Description

Spin-polarized carrier transport across Nb/p-(In,Mn)As junctions has been studied. Suppressions of conductance in the superconductor sub-gap region and conductance peaks at the bias voltage around the edge of the sub-gap are observed. These features are well reproduced by a newly modified BTK model including both spin polarization and the inverse proximity effect. The value of spin polarization in p-(In,Mn)As extracted by the calculation is P = 0.725 at 0.5 K with Z = 0.25

Additional details

Identifiers

DOI
10.1063/1.3671708;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1416
Journal Issue
1
Journal Page Range
p. 100-104
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
15. international conference on narrow gap systems
Acronym
NGS15
Dates
1-5 Aug 2011
Place
Blacksburg, VA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43094117
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ENERGY GAP; INDIUM ARSENIDES; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; NIOBIUM; PROXIMITY EFFECT; P-TYPE CONDUCTORS; REFLECTION; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SPIN ORIENTATION; SUPERCONDUCTORS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; METALS; ORIENTATION; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METALS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
(c) 2011 American Institute of Physics