Published September 2005
| Version v1
Journal article
Synchrotron radiation induced Si-H dissociation on H-Si(111)-1x1 surfaces studied by in situ monitoring in the undulator-scanning tunneling microscope system
Creators
- 1. Institute for Molecular Science, Myodaiji, Okazaki 444-8585 (Japan)
Description
Irradiation effects of the synchrotron radiation (SR) have been investigated on the hydrogen terminated- (H-) Si (111) surfaces by using the undulator beam and the in situ scanning tunneling microscope (STM). The small protrusions (SPs) generated by the undulator beam irradiation were assigned to the rest atoms with missing H. From the observed relation among the SP density, photon energy of the undulator beam and the total photon flux, it has been concluded that the main mechanism of the Si-H bond dissociation by the undulator beam irradiation is valence electron excitations of the Si-H bond by incident photons
Additional details
Identifiers
- DOI
- 10.1116/1.1996613;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 23
- Journal Issue
- 5
- Journal Page Range
- p. 1364-1366
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37035546
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL BONDS; DESORPTION; DISSOCIATION; ELECTRONS; EXCITATION; HYDROGEN; IRRADIATION; PHOTONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SYNCHROTRON RADIATION; VALENCE; WIGGLER MAGNETS
- Descriptors DEC
- BOSONS; BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; FERMIONS; LEPTONS; MAGNETS; MASSLESS PARTICLES; MATERIALS; MICROSCOPY; NONMETALS; RADIATIONS; SEMIMETALS; SORPTION
Optional Information
- Notes
- (c) 2005 American Vacuum Society