Interfacial water intercalation-induced metal-insulator transition in NbS2/BN heterostructure
Creators
- 1. Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872 (China)
- 2. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190 (China)
- 3. Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
Description
Interfacial engineering, such as molecule intercalation, can modify properties and optimize performance of van der Waals heterostructures and their devices. Here, we investigated the pristine and water molecule intercalated heterointerface of niobium disulphide (NbS2) on hexagonal boron nitride (h-BN) (NbS2/BN) using advanced atomic force microscopy (AFM), and observed the metal-insulator transition (MIT) of first layer (1L-) of NbS2 induced by water molecule intercalation. In pristine sample, interfacial charge transfers were confirmed by the direct detection of trapped static charges at the post-exposed h-BN surface, produced by mechanically peeling off the 1L-NbS2 from the substrate. The interfacial charge transfers facilitate the intercalation of water molecules at the heterointerface. The intercalated water layers make a MIT of 1L-NbS2, while the pristine metallic state of the following NbS2 layers remains preserved. This work is of great significance to help understand the interfacial properties of 2D metal/insulator heterostructures and can pave the way for further preparation of an ultrathin transistor. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/ab0452Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 30
- Journal Issue
- 20
- Journal Page Range
- [6 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51047287
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BORON NITRIDES; CLATHRATES; DETECTION; ELECTRICAL INSULATORS; METALS; MOLECULES; NIOBIUM SULFIDES; PERFORMANCE; PHASE TRANSFORMATIONS; SUBSTRATES; SURFACES; TRANSISTORS; VAN DER WAALS FORCES
- Descriptors DEC
- BORON COMPOUNDS; CHALCOGENIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MICROSCOPY; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS