Published November 3, 2008
| Version v1
Journal article
SiGe quantum well thermistor materials
- 1. Acreo AB, Electrum 236, 164 40 Kista (Sweden)
- 2. School of Information and Communication Technology, Royal Institute of Technology, Kista (Sweden)
- 3. IHP, Im Technologiepark 25, 15 236 Frankfurt (Oder) (Germany)
Description
A novel monocrystalline high-performance thermistor material based on SiGe quantum well (QW) heterostructures is presented. A comparison between different growth temperatures for Si0.7Ge0.3 and Si growth is performed. Results illustrate a value of 2.3%/K for TCR with a low excess noise
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.08.164Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.08.164;
- PII
- S0040-6090(08)00968-1;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 517
- Journal Issue
- 1
- Journal Page Range
- p. 337-339
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 5. International conference on silicon epitaxy and heterostructures
- Acronym
- ICSI-5
- Dates
- 20-24 May 2007
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059022
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EPITAXY; GERMANIUM SILICIDES; PERFORMANCE; QUANTUM WELLS; THERMISTORS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; GERMANIUM COMPOUNDS; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SILICIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.