Published January 1, 2007 | Version v1
Journal article

Tests of monolithic active pixel sensors at national synchrotron light source

  • 1. Brookhaven National Laboratory, Upton, NY 11973 (United States)
  • 2. IPHC, CNRS-IN2P3/ULP, 23 rue du Loess, BP 28, 67037 Strasbourg cedex 02 (France)

Description

The paper discusses basic characterization of Monolithic Active Pixel Sensors (MAPS) carried out at the X12A beam-line at National Synchrotron Light Source (NSLS), Upton, NY, USA. The tested device was a MIMOSA V (MV) chip, back-thinned down to the epitaxial layer. This 1M pixels device features a pixel size of 17x17μm2 and was designed in a 0.6μm CMOS process. The X-ray beam energies used range from 5 to 12keV. Examples of direct X-ray imaging capabilities are presented

Additional details

Identifiers

DOI
10.1016/j.nima.2006.09.092;
PII
S0168-9002(06)01746-3;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
570
Journal Issue
1
Journal Page Range
p. 165-170
ISSN
0168-9002
CODEN
NIMAER

INIS

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.