Published May 9, 1985
| Version v1
Journal article
Selectively implanted oxygen isolation technology (SIO)
Creators
- 1. Toronto Univ., Ontario (Canada). Dept. of Electrical Engineering
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Electron. Lett.
- Journal Volume
- 21
- Journal Issue
- 10
- Series
- Electron. Lett.
- Journal Page Range
- 448-449
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 16059209
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- DEPTH; ELECTRICAL PROPERTIES; ION IMPLANTATION; OXIDATION; OXYGEN IONS; SEMICONDUCTOR DIODES; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL REACTIONS; DIMENSIONS; DISTRIBUTION; ELEMENTS; IONS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS
Optional Information
- Notes
- Brief item.