Published November 2024 | Version v1
Journal article Metadata-only

Dynamic RON degradation suppression by gate field plate in partially recessed AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Creators

  • 1. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ (United Kingdom)
  • 2. School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123 (China)
  • 3. School of Chips, Entrepreneur College (Taicang), Xi'an Jiaotong-Liverpool University, Suzhou, 215123 (China)

Description

This study investigates the impact of gate field plate (G-FP) lengths on the dynamic on-resistance degradation in partially recessed-gate D-mode GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs). Devices with G-FPs of varying lengths are fabricated, and their electrical characteristics are evaluated. It is found that G-FPs effectively reduce electron trapping and suppress the dynamic on-resistance degradation, leading to improved device performance. The study provides design suggestions for enhancing the reliability and stability of AlGaN/GaN-based MIS-HEMTs. (© 2024 Wiley‐VCH GmbH)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.202300976

Additional details

Identifiers

DOI
10.1002/pssa.202300976;

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science (Online)
Journal Volume
221
Journal Issue
21
Journal Page Range
p. 1-5
ISSN
1862-6319
CODEN
PSSABA

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
56000857
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALUMINIUM NITRIDES; ALUMINIUM OXIDES; BREAKDOWN; ELECTRIC FIELDS; ELECTRODES; ELECTRON MOBILITY; FABRICATION; GALLIUM NITRIDES; MIS TRANSISTORS; MORPHOLOGY; PERFORMANCE; PIEZOELECTRICITY; POLARIZATION; RELIABILITY; STABILITY; TRAPPING; WAVE FORMS
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRICITY; GALLIUM COMPOUNDS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
AID: 2300976; Nitride semiconductors