Published July 1996 | Version v1
Journal article Metadata-only

Neutral impurity scattering in semiconductors

Creators

  • 1. Ankara Univ. (Turkey). Faculty of Sciences. Dept. of Engineering Physics

Description

Applying the correlation function technique, a temperature-independent mobility μn has been obtained and it is shown that this μn remains close to the experimental mobility of n-type Ge around 10K

Additional details

Publishing Information

Journal Title
Nuovo Cimento. D
Journal Volume
18D
Journal Issue
7
Journal Page Range
p. 885-888.
ISSN
0392-6737
CODEN
NCSDDN

INIS

Country of Publication
Italy
Country of Input or Organization
Italy
INIS RN
28038667
Subject category
S72: PHYSICS OF ELEMENTARY PARTICLES AND FIELDS;
Descriptors DEI
GERMANIUM; KONDO EFFECT; N-TYPE CONDUCTORS; SCATTERING; SEMICONDUCTOR MATERIALS; TRACE AMOUNTS; TRANSPORT THEORY
Descriptors DEC
ELEMENTS; MATERIALS; METALS