First time combination of frozen density embedding theory with the algebraic diagrammatic construction scheme for the polarization propagator of second order
Creators
- 1. Interdisciplinary Center for Scientific Computing, Ruprecht-Karls University, Im Neuenheimer Feld 368, 69120 Heidelberg (Germany)
- 2. Dèpartement de Chimie Physique, Université de Genève, 30 Quai Ernest-Ansermet, 1211 Genève 4 (Switzerland)
- 3. Dipartimento di Chimica "G. Ciamician," Università di Bologna, Via Selmi 2, 40126 Bologna (Italy)
Description
The combination of Frozen Density Embedding Theory (FDET) and the Algebraic Diagrammatic Construction (ADC) scheme for the polarization propagator for describing environmental effects on electronically excited states is presented. Two different ways of interfacing and expressing the so-called embedding operator are introduced. The resulting excited states are compared with supermolecular calculations of the total system at the ADC(2) level of theory. Molecular test systems were chosen to investigate molecule–environment interactions of varying strength from dispersion interaction up to multiple hydrogen bonds. The overall difference between the supermolecular and the FDE-ADC calculations in excitation energies is lower than 0.09 eV (max) and 0.032 eV in average, which is well below the intrinsic error of the ADC(2) method itself.
Additional details
Identifiers
- DOI
- 10.1063/1.4948741;
Publishing Information
- Journal Title
- Journal of Chemical Physics
- Journal Volume
- 144
- Journal Issue
- 20
- Journal Page Range
- vp.
- ISSN
- 0021-9606
- CODEN
- JCPSA6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49002904
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- COMPUTER CALCULATIONS; DENSITY; ENVIRONMENTAL EFFECTS; EXCITATION; EXCITED STATES; POLARIZATION; PROPAGATOR; SYNTHESIS
- Descriptors DEC
- ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; PHYSICAL PROPERTIES
Optional Information
- Notes
- (c) 2016 Author(s)