Published 1992
| Version v1
Book
Optical and infrared spectroscopy of laser irradiated Bi implanted SiO2 glasses
- 1. Materials Science and Engineering Dept., Vanderbilt Univ., Nashville, TN (United States)
- 2. Physics Dept., Fisk Univ., Nashville, TN (United States)
- 3. Solid State Div., Oak Ridge National Lab., Oak Ridge, TN (United States)
Description
In this paper optical and infrared reflection spectra for Bi-implanted high-purity silica are reported as a function of dose and 5eV laser irradiation. The extinction coefficient per ion and the reflectance spectra are dose dependent. Subsequent effects of laser irradiation are dependent upon Bi content and total number of laser pulses. Changes reported are attributed to two photothermal processes. One involving diffusion and desorption of Bi ions and annealing of defects, while the second is dominated by annealing
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-129-8
- Imprint Title
- Proceedings of the phase formation and modification by beam-solid interactions
- Imprint Pagination
- 913 p.
- Journal Page Range
- p. 383-388.
Conference
- Title
- Annual fall meeting of the Materials Research Society.
- Dates
- 2-6 Dec 1991.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24010301
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BISMUTH IONS; DESORPTION; DIFFUSION; DOPED MATERIALS; DOSE RATES; EV RANGE 01-10; GLASS; INFRARED SPECTRA; ION IMPLANTATION; LASER RADIATION; PHYSICAL RADIATION EFFECTS; PULSES; SILICON OXIDES; VISIBLE SPECTRA
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ENERGY RANGE; EV RANGE; HEAT TREATMENTS; IONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS; SPECTRA
Optional Information
- Secondary number(s)
- CONF-911202--.