Published November 15, 1988 | Version v1
Journal article

Pressure-induced changes in L/sub III/ x-ray-absorption near-edge structure of CeO2 and CeF4: Relevance to 4f-electronic structure

  • 1. Institut fuer Atom- und Festkoerperphysik, Freie Universitaet Berlin, D-1000 Berlin 33, Germany

Description

X-ray-absorption near-edge structure (XANES) studies were performed at the L/sub III/ thresholds of CeO2 and CeF4 as a function of external pressure up to ≅267 kbar at room temperature. In both cases, the 4f0-related higher-energy component of the essentially double-peaked XANES structure decreases in relative intensity with pressure, opposite to what is generally observed for metallic mixed-valent Ce compounds. This supports the proposed peak assignment on the basis of core-hole induced many-body effects due to 4f-ligand covalency compatible with traditional tetravalency of these compounds

Additional details

Publishing Information

Journal Title
Physical Review, B: Condensed Matter
Journal Volume
38
Journal Issue
14
Series
Phys. Rev., B: Condens. Matter.
Journal Page Range
10174-10177
ISSN
0163-1829
CODEN
PRBMD