Use of atomic-layer etching methods and focused ion beams for the formation of functional elements of microelectronics devices

Experimental studies have been carried out on the formation of elements of power microelectronics and nanosensoric devices based on a combination of a sequence of methods of focused ion beams and atomic layer etching. An array of nanoscale vertically oriented whiskers was formed, consisting of a combination of SiC and a thin carbon film. It was found that the formed cell when the electrical parameters of the circuit change, when the voltage increases from 5 to 20 V, the current increases from 0.15±0.03 nA to 6.3±0.4 nA, and when the electric field increases from 60 to 180 MV/cm, the current density increases from 96.32±8.81 A/cm