Published July 11, 2016 | Version v1
Journal article Metadata-only

Zn precipitation and Li depletion in Zn implanted ZnO

Creators

  • 1. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 (Australia)
  • 2. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway)
  • 3. Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601 (Australia)

Description

Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 1015 cm−2 and 1 × 1017 cm−2. Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60 μm. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.

Additional details

Identifiers

DOI
10.1063/1.4958693;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
109
Journal Issue
2
Journal Page Range
vp.
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48035145
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; DEPTH; INTERSTITIALS; MASS SPECTROSCOPY; PRECIPITATION; TEMPERATURE RANGE 0400-1000 K; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONS; ELECTRON MICROSCOPY; HEAT TREATMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; SEPARATION PROCESSES; SPECTROSCOPY; TEMPERATURE RANGE; ZINC COMPOUNDS

Optional Information

Notes
(c) 2016 Author(s)